| 摘要 |
<p>The semiconductor device according to the present invention includes a first wiring formed on a first insulating film, a second insulating film provided on the first wiring, a second wiring provided on the second insulating film, and a plurality of via holes for electrically connecting the first wiring and the second wiring where the first wiring and the second wiring intersect, provided in a via hole formation region, wherein the first wiring is divided in the via hole formation region into a first branch wiring and a second branch wiring, and the widths of the first branch wiring and the second branch wiring are respectively 7 mu m or less. <IMAGE></p> |
