发明名称 Surface acoustic wave device
摘要 <p>A surface acoustic wave device includes a piezoelectric substrate of a LiTaO3 single crystal, the crystal having X, Y and Z axes and a cut plane. The X axis of the crystal is oriented in a direction of propagation of surface acoustic waves. The cut plane of the crystal is rotated around the X axis at a rotated angle from the Y axis to the Z axis, the rotated angle being in a range between 40 DEG and 42 DEG . A pair of reflectors (10A, 10B) are formed on the substrate and aligned in a row in the direction of propagation. Interdigital transducers (11A, 11B, 11C) are formed on the substrate and aligned in the row in the direction of propagation, the interdigital transducers interposed between the reflectors, each interdigital transducer having pairs of mutually opposed primary electrode fingers and secondary electrode fingers, the interdigital transducers including at least a front transducer, a middle transducer and a rear transducer aligned in the row in the direction of propagation. In the device, a ratio of the number of pairs of the electrode fingers in one of the front transducer and the rear transducer to the number of pairs of the electrode fingers in the middle transducer is in a range between 55% and 80%. &lt;IMAGE&gt;</p>
申请公布号 EP0845858(A2) 申请公布日期 1998.06.03
申请号 EP19970306882 申请日期 1997.09.04
申请人 FUJITSU LIMITED 发明人 UEDA, MASANORI;KAWACHI, OSAMU;ENDOH, GOU;FUJIWARA, YOSHIRO
分类号 H01L41/09;H03H9/00;H03H9/02;H03H9/145;H03H9/25;H03H9/64;(IPC1-7):H03H9/02 主分类号 H01L41/09
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