发明名称 |
Method for manufacturing accelerometers using the silicon on insulator technology |
摘要 |
This method comprises the following steps: a) making a film (32) of conducting monocrystalline silicon on a silicon substrate (8) and separated from the latter by an insulating layer (28); b) etching the silicon film (32) and the insulating layer (28) down to the substrate (8) in order to fix the form of the moving parts (2, 6) and of the measurement means (12, 20, 16); c) making electrical contacts (24, 26) for the measurement means; d) partially removing the insulating layer (32) in order to uncover the moving parts (2, 6), the rest of the insulating layer (28) being used for joining the moving parts and the substrate. <IMAGE> |
申请公布号 |
EP0605300(B1) |
申请公布日期 |
1998.06.03 |
申请号 |
EP19930403154 |
申请日期 |
1993.12.23 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
DIEM, BERNARD;DELAYE, MARIE-THERESE |
分类号 |
G01P15/125;B81B3/00;G01P15/08;G01P15/13;H01L21/306;H01L29/84 |
主分类号 |
G01P15/125 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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