发明名称 |
SEED CRYSTAL FOR GROWING MONOCRYSTALS, USE OF THE SEED CRYSTAL AND PROCESS FOR PRODUCING SiC MONOCRYSTALS OR MONOCRYSTALLINE SiC LAYERS |
摘要 |
A seed crystal assembly for producing monocrystals and a method for producing SiC monocrystals or monocrystalline SiC layers include a seed crystal with a surface having a first partial region intended as a crystallization surface for a monocrystal grown out of a gas phase and a second partial region with a coating that is chemically resistant to the seed crystal and to the gas phase and does not melt at the growth temperatures. As a result, thermal degradation of the seed crystal is avoided and the quality of the monocrystals which are produced is increased. |
申请公布号 |
EP0845055(A1) |
申请公布日期 |
1998.06.03 |
申请号 |
EP19960920724 |
申请日期 |
1996.06.27 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
VOELKL, JOHANNES;STEIN, RENE |
分类号 |
C30B23/00;C30B23/02;C30B23/04;C30B25/02;C30B25/18;C30B29/36 |
主分类号 |
C30B23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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