| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent the reduction in the characteristic of a TFT due to the mis-registration of a mask by forming a semiconductor layer becoming the active layer of the TFT and a gate line becoming the gate electrode of the transistor so as cross each other two times. SOLUTION: In order to increase a capacitance to be connected to the drain of a transistor (TFT), the polysilicon layer 1 of a first layer constituting the active layer of the transistor is made to be prolongingly provided upward along a signal line 3 (1a) and moreover it is bent to the side of an adjacent pixel along the gate line 2 of the pixel of a front stage. Then, one part of the gate line 2 of the front stage is prolongingly provided downward similarly along the signal line 3 (2a). Thus, since the capactiances between the prolongingly provided parts 1a of the polysilicon layers 1 of the first layer and the prolongingly provided parts 2a of the line 2 are connected to drains of the TFTs impressing voltages to respective pixel electrodes and moreover one parts of the polysilicon layer 1 are prolongingly provided so as to cover corner parts of adjacent pixels, holding capacitances to be connected to the TFTs are made larger by amounts equivalent to this.</p> |
