发明名称 |
Process for making doped polysilicon layers on sidewalls |
摘要 |
Method for creating a doped polysilicon layer of accurate shape on a sidewall of a semiconductor structure. According to the present method, a doped polysilicon film covering at least part of said semiconductor structure and of said sidewall is formed. This polysilicon film then undergoes a reactive ion etching (RIE) process providing for a high etch rate of said polysilicon film to approximately define the shape of the polysilicon layer on said sidewall. Then, said polysilicon film undergoes a second reactive ion etching process. This second reactive ion etching process is a low polysilicon etch rate process such that non-uniformities of the surface of said polysilicon film are removed by sputtering.
|
申请公布号 |
US5759920(A) |
申请公布日期 |
1998.06.02 |
申请号 |
US19960749748 |
申请日期 |
1996.11.15 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BURNS, JR., STUART MCALLISTER;HANAFI, HUSSEIN IBRAHIM;KOCON, WALDEMAR WALTER |
分类号 |
H01L21/3065;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/3065 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|