发明名称 Method of making an antifuse structure using a metal cap layer
摘要 An antifuse includes a metal cap layer located at the second barrier layer of the antifuse to improve the antifuse yield and long term reliability. An antifuse further includes one or more interfacial oxide film layers surrounding an antifuse dielectric layer to provide narrowing of the antifuse programming voltage distribution and to further improve the antifuse yield and long term reliability.
申请公布号 US5759876(A) 申请公布日期 1998.06.02
申请号 US19950551588 申请日期 1995.11.01
申请人 UNITED TECHNOLOGIES CORPORATION 发明人 SINGLEVICH, SCOTT G.;HOLWAY, BRADLEY S.;HUMPHREY, KURT D.;POARCH, BRIAN SCOTT;REEDER, MICHAEL R.;VERZWYVELT, NEAL J.
分类号 H01L21/82;H01L23/525;H01L27/10;(IPC1-7):H01L21/82 主分类号 H01L21/82
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