| 摘要 |
A flash EEPROM cell structure and a method for forming it. The method of forming the EEPROM cell includes the steps of: forming a plurality of trenches on a substrate, the trenches being filled with an insulating layer; forming bit lines between the trenches and on the substrate; forming an insulating layer on the bit lines; forming a floating gate, with at least one side of it contacting with the bit lines; and simultaneously forming a control gate and an erasing gate. The control gate and the erasing gate cross the bit lines and the floating gate. The erasing gate also extends over the trenches. The floating gate and the erasing gate extend down into the trenches.
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