发明名称 |
Semiconductor electron emission device |
摘要 |
In a semiconductor electron emission device for causing an avalanche breakdown by applying a reverse bias voltage to a Schottky barrier junction between a metallic material or metallic compound material and a p-type semiconductor, and externally emitting electrons from a solid-state surface, a p-type semiconductor region (first region) for causing the avalanche breakdown contacts a p-type semiconductor region (second region) for supplying carriers to the first region, and a semi-insulating region is formed around the first region.
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申请公布号 |
US5760417(A) |
申请公布日期 |
1998.06.02 |
申请号 |
US19950410396 |
申请日期 |
1995.03.27 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
WATANABE, NOBUO;KANEKO, NORIO;OKUNUKI, MASAHIKO;TSUKAMOTO, TAKEO |
分类号 |
H01J1/308;H01J9/02;(IPC1-7):H01L29/47;H01L29/812;H01L31/108;H01L33/00 |
主分类号 |
H01J1/308 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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