发明名称 Fabrication process using a thin resist
摘要 A fabrication process includes a step of providing a substrate to be fabricated. A multi-layer antireflective layer is then formed on the substrate. A patterned resist having a thickness less than 850 nanometers is formed on the multi-layer antireflective layer and the substrate is fabricated using the patterned resist as a mask.
申请公布号 US5759746(A) 申请公布日期 1998.06.02
申请号 US19960653426 申请日期 1996.05.24
申请人 KABUSHIKI KAISHA TOSHIBA;INTERNATIONAL BUSINESS MACHINES CORP. 发明人 AZUMA, TSUKASA;OHIWA, TOKUHISA;MATSUDA, TETSUO;DOBUZINSKY, DAVID M.;OKUMURA, KATSUYA
分类号 G03F7/11;G03F7/09;H01L21/027;(IPC1-7):G03F7/26 主分类号 G03F7/11
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