MANUFACTURE OF THIN FILM TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film transistor possessed of an LDD structure through a simple process without a resist mask used for forming an LDD region. SOLUTION: A polysilicon thin film 50, a gate insulating film 60, and a gate electrode 70 are successively formed on a substrate 10, and an insulating film 80 is deposited so as to cover the gate electrode 70. The insulating film 80 is subjected to anisotropic etching from above, and etching is stopped when the surface of the gate electrode 70 is exposed, thereby a side wall 85 is formed along the side of the gate electrode 70. Thereafter, when ions are implanted through the gate insulating film 60 and the side wall 85 from above the substrate 10, a source/drain region (impurity diffusion layer) 100 and an LDD region 110 are formed in the polysilicon thin film 50 at the same time.