发明名称 |
Bipolar transistor circuit element having base ballasting resistor |
摘要 |
A bipolar transistor circuit element includes a semiconductor substrate; successively disposed on the substrate, a base layer, an emitter layer, and a collector layer; a bipolar transistor formed from parts of the collector, base, and emitter layers and including a base electrode electrically connected to the base layer and a base electrode pad for making an external connection to the base layer; a base ballasting resistor formed from a part of the base layer isolated from the bipolar transistor and electrically connecting the base electrode to the base electrode pad; and a base parallel capacitor connected in parallel with the base ballasting resistor wherein the base parallel capacitor includes part of the base input pad, a dielectric film disposed on part of the base electrode pad, and a second electrode disposed on the dielectric layer opposite the base electrode pad and electrically connected to the emitter electrode of the bipolar transistor. The base ballasting resistor has a high resistance relative to an emitter ballasting reactor so that it can be easily mass produced with good uniformity and yield.
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申请公布号 |
US5760457(A) |
申请公布日期 |
1998.06.02 |
申请号 |
US19970806396 |
申请日期 |
1997.02.26 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
MITSUI, SHIGERU;SONODA, TAKUJI;SHIMURA, TERUYUKI;TAKAMIYA, SABURO |
分类号 |
H01L21/331;H01L21/8222;H01L27/06;H01L29/08;H01L29/205;H01L29/73;H01L29/737;(IPC1-7):H01L29/00;H01L31/032 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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