| 摘要 |
PROBLEM TO BE SOLVED: To protect the lower electrode of a capacitor against oxidation by a method wherein the lower electrode is formed on a semiconductor substrate, the protective film pattern is selectively formed on the lower electrode, and a dielectric film and an upper conductive layer are successively formed on the protective film pattern. SOLUTION: A lower electrode of a capacitor composed of a contact plug 130, a diffusion barrier layer pattern 140a, and a lower conductive pattern 150a is formed on a semiconductor substrate 100. An electroplating process is carried out making a selected metal serve as an anode and the substrate where the lower electrode pattern 150a and the diffusion barrier layer pattern 140a are formed serve as a cathode. By this setup, a protective film pattern 155 is formed of a selected film. The protective film pattern 155 which does not react on not only oxygen but also a dielectric film 160 formed on it is selected. The dielectric film 160 and an upper conductive layer 170 are formed for the formation of a capacitor. |
