发明名称 SEMICONDUCTOR STORAGE DEVICE AND ITS IMPRINT STATE CONTROL METHOD
摘要 PROBLEM TO BE SOLVED: To let a storage device having the function as a RAM have also the function as a ROM, by providing an imprint control means controlling the imprint state of ferroelectric body in, at least, one storage cell. SOLUTION: A memory 1 is formed like an island on a silicon substrate, and a heat releasing part 2 is formed surrounding the memory 1. When a current is made to flow through the heating releasing part 2 from electrodes 3 formed on the surface of the heat releasing part 2, the heat releasing part 2 starts releasing heat, and the heat released from the part 2 is applied to the memory 1. That is, a heat application means is used as an imprint means and built in a semiconductor memory device. For instance, heat is applied to the memory 1 so as to keep it at temperatures of 150 to 200 deg.C for a few hours, whereby the memory 1 is turned into an imprint state. A memory can be turned into an imprint state by the application of either heat or voltage, but when both heat and voltage are applied to the memory at the same time, it is turned into an imprint state in a shorter time by synergistic effect.
申请公布号 JPH10150157(A) 申请公布日期 1998.06.02
申请号 JP19960309824 申请日期 1996.11.21
申请人 ROHM CO LTD 发明人 NISHIMURA KIYOSHI
分类号 G11C11/00;G11C11/22;H01L21/822;H01L21/8242;H01L21/8246;H01L21/8247;H01L27/04;H01L27/10;H01L27/105;H01L27/108;H01L29/788;H01L29/792 主分类号 G11C11/00
代理机构 代理人
主权项
地址
您可能感兴趣的专利