发明名称 MANUFACTURE OF THIN FILM DIODE
摘要 <p>PROBLEM TO BE SOLVED: To manufacture a thin film diode which is excellent in switching characteristics and capable of restraining an after image phenomenon from occurring so as to improve a liquid display device in display quality. SOLUTION: A lower electrode 13 of tantalum nitride film is formed on an LCD substrate 1, an anodic oxide film 15 is formed on the surface of the lower electrode 13 through an anodizing treatment, a first thermal treatment is carried out in a vacuum, and a second thermal treatment is carried out in a vacuum before or after a process where an upper electrode 17 of transparent conductive film is formed and patterned on the anodized film 15. By this setup, through the control of the anodized film in excess oxygen and oxygen deficiency which dominates a Poole-Frenkel conduction, a thin film diode can be controlled in current-voltage characteristics so as to be optimal for the drive of liquid crystal.</p>
申请公布号 JPH10150233(A) 申请公布日期 1998.06.02
申请号 JP19970251187 申请日期 1997.09.16
申请人 CITIZEN WATCH CO LTD 发明人 AKIBA YUICHI;IDE MASASHI
分类号 G02F1/136;G02F1/1365;H01L49/02;(IPC1-7):H01L49/02 主分类号 G02F1/136
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