| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor having a constitution, wherein polysilicon layers having different conductivity types are connected with the transistor and the generation of the unsatisfactory state due to the diffusion of impurities is prevented, and a method of manufacturing the transistor. SOLUTION: A drain 6, a channel 7 and a source 8 are integrally formed on the surface of a second oxide film 4 using polysilicon layers. The drain 6 is formed in such a way as to connect with a pad layer 3 (second polycrystalline semiconductor layer) via a contact hole 5 formed in such a way as to reach the upper surface of the pad layer 3. A boron implanted region BR is formed in the pad layer 3, which is positioned on the bottom of the hole 5 (open part). |
