| 摘要 |
A semiconductor device includes a CMOSFET, including n-channel and p-channel MOSFETs. A terminal is connected to a node connecting the drains of the MOSFETs. A pull-up or pull-down resistor is connected between the terminal and a power source potential. The pull-up or pull-down resistor is composed of two serially-connected resistances. One of the two serially connected resistances is connected to the terminal and is formed of a resistance material that does not form a pn junction with a semiconductor substrate, and the other of the two resistances is formed of a diffusion layer of conduction type that forms a pn junction with the semiconductor substrate.
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