发明名称 |
Refractory metal-titanium nitride conductive structures |
摘要 |
The present invention provides a conductive structure for use in semiconductor devices. The structure can be used to interconnect the various diffusion regions or electrodes of devices formed on a processed semiconductor substrate to a layer of metal, to interconnect overlying layers of metal or to provide the gate electrode of an FET device formed on the surface of a semiconductor substrate. Various embodiments of the invention are described, but in broad form the active metallurgy of the present invention comprises a thin continuous layer to titanium-titanium nitride and a thick layer of a refractory metal, e.g. tungsten, overlying the titanium nitride layer.
|
申请公布号 |
US5760475(A) |
申请公布日期 |
1998.06.02 |
申请号 |
US19940339317 |
申请日期 |
1994.11.14 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CRONIN, JOHN EDWARD;KAANTA, CARTER WELLING;LEACH, MICHAEL ALBERT;LEE, PEI-ING PAUL |
分类号 |
H01L23/52;H01L21/28;H01L21/3205;H01L21/768;H01L23/532;H01L29/43;H01L29/49;H01L29/78;(IPC1-7):H01L23/48 |
主分类号 |
H01L23/52 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|