SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a circuit which is improved in data retention characteristics, capable of relieving faults, changing functions or trimming owing to easy manufacturing and high reliability by providing a barrier layer covering the floating gate partially or wholy in a non-volatile memory element of single-layer gate structure. SOLUTION: The memory mat MR-MAT is provided with memory elements for mask ROM in the form of matrix. The memory mat PR-MAT is provided with a matrix of single-layer gate structured non-volatile memory elements for relieving defective data. The word line of the memory mat MR-MAT is selected by an X decoder circuit XDC. The data line of the memory mat MR- MAT is connected to the common data line by a column switch gate MR-YGT. The column switch gate MR-YGT operates to connect one data line for each output mat from the inside of the memory mat MR-MAT to the common data line.