| 摘要 |
PROBLEM TO BE SOLVED: To enhance the surface of a base layer in evenness so as to form a bit line easily by patterning by a method wherein a first conductive layer is formed on all the surface of a first insulating film, and all the surface of the first conductive layer is flattened by etching until the surface of the first insulating film is exposed. SOLUTION: A gate electrode 32 is formed on a semiconductor substrate 30. A first insulating film 34 is formed on all the surface of the semiconductor substrate 30, and a first conductive layer is formed thick on all the surface of the first insulating film 34. The first conductive layer is etched back into a first conductive layer pattern 36a as high in evenness at the gate electrode 32. A contact hole is formed so as to make the surface of a drain region D exposed. A second conductive layer is formed on all the surface to fill up the contact hole, and then a third conductive layer is formed uniform in thickness. A patterning process is carried out after the second and third conductive layer are formed on the first conductive layer flattened by etching back, whereby a process where these layers are patterned can be easily carried out. |
