发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent the occurrence of voids and chip cracks at a bonding layer by applying and drying insulating bonding agent by a stamping method, and mounting a semiconductor chip with the dried bonding agent layer being heated. SOLUTION: Paste-state insulating bonding agent 3 is applied on a disk- shaped metal plate 2, wherein a groove 1 is provided at the surface. With the metal plate 2 being rotated, the insulating bonding agent 3 is smoothed by a trowel plate 4 and inputted into the groove 1. The tip of a probe 5 is inputted into the groove 1 of the metal plate. The paste-shaped insulating bonding agent 3, which is attached to the tip, is brought into contact with or close to the head or the lead part of a frame 6 and transferred and applied. With heating being performed to the specified temperature after heating and drying, the chip is compressed for several seconds and bonded and fixed. Thus, the warping and deformation of the large chip and the occurrence of voids and chip cracks at the bonding layer can be prevented.
申请公布号 JPH10150060(A) 申请公布日期 1998.06.02
申请号 JP19960309686 申请日期 1996.11.20
申请人 TOSHIBA CHEM CORP 发明人 FUJII AYAKO;MATSUDA OSAMU
分类号 H01L21/52;(IPC1-7):H01L21/52 主分类号 H01L21/52
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