发明名称 |
Piezoresistive device and fabrication method thereof |
摘要 |
Disclosed is the method of producing a piezo-device utilizing an ultra-thin Mo-C film as a piezoresistive material for a general class of improved piezo-device with the high sensitivity and the weak temperature dependence.
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申请公布号 |
US5760675(A) |
申请公布日期 |
1998.06.02 |
申请号 |
US19960716550 |
申请日期 |
1996.09.19 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
LEE, SEONG-JAE;PARK, KYOUNG-WAN;SHIN, MIN-CHEOL |
分类号 |
G01L1/18;G01L1/22;H01L29/84;(IPC1-7):G01L1/22 |
主分类号 |
G01L1/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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