发明名称 Piezoresistive device and fabrication method thereof
摘要 Disclosed is the method of producing a piezo-device utilizing an ultra-thin Mo-C film as a piezoresistive material for a general class of improved piezo-device with the high sensitivity and the weak temperature dependence.
申请公布号 US5760675(A) 申请公布日期 1998.06.02
申请号 US19960716550 申请日期 1996.09.19
申请人 ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE 发明人 LEE, SEONG-JAE;PARK, KYOUNG-WAN;SHIN, MIN-CHEOL
分类号 G01L1/18;G01L1/22;H01L29/84;(IPC1-7):G01L1/22 主分类号 G01L1/18
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