发明名称 |
Metal, passivating layer, semiconductor, field-effect transistor |
摘要 |
A majority carrier device includes a bulk active region and a thin-film passivating layer on the bulk active region. The thin-film passivating layer includes a Group 13 element and a chalcogenide component. In one embodiment, the majority carrier device is a metal, passivating layer, semiconductor, field-effect transistor. The transistor includes an active layer and thin-film passivating layer on the active layer. The thin-film passivating layer includes a Group 13 element and a chalcogenide component. Source and drain contacts are disposed on the active layer or the passivating layer. A gate contact is disposed on the passivating layer between the source contact and the drain contact.
|
申请公布号 |
US5760462(A) |
申请公布日期 |
1998.06.02 |
申请号 |
US19970820183 |
申请日期 |
1997.03.19 |
申请人 |
PRESIDENT AND FELLOWS OF HARVARD COLLEGE;TRIQUINT SEMICONDUCTOR, INC. |
发明人 |
BARRON, ANDREW R.;JENKINS, PHILLIP P.;MACINNES, ANDREW N.;HEPP, ALOYSIUS F. |
分类号 |
H01L23/29;H01L23/31;H01L23/58;H01L29/24;H01L29/47;H01L29/51;H01L29/80;(IPC1-7):H01L23/58;H01L29/78 |
主分类号 |
H01L23/29 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|