| 摘要 |
PROBLEM TO BE SOLVED: To efficiently implant electrons, reduce the generation of short circuit, and stably emit light in sufficient brightness for a long time by constituting an electron implantation electrode on a hole implantation electrode with an amorphous metal, and arranging a metal layer having low work function on the surface on the light emitting layer side in the electron implantation electrode. SOLUTION: A glass substrate 11 on which a hole implantation electrode 12 constituted with indium-tin oxide is formed is washed, dried, then while the substrate 11 is resistance-heated, MTDA is vacuum-deposited on the electrode 12 to form a hole transportation layer 13. TPD and rubrene are co- deposited under vacuum on the layer 13 to form a light emitting layer 14, and BeBq2 is vacuum-deposited on the layer 14 to form an electron transportation layer 15. Magnesium-indium alloy is vacuum-deposited on the layer 15 to form a metal layer 16a, and the layer 16a is covered with amorphous metal comprising Fe80 B20 to form an electron implantation electrode 16. Light is stably emitted for a long time, and environment resistance and reliability are enhanced. |
