HALFTONE PHASE SHIFT MASK AND METHOD FOR MEASURING ABERRATION BY USING HALFTONE PHASE SHIFT MASK

摘要

PROBLEM TO BE SOLVED: To form fine patterns at wide depths of focus over the entire part of chips by constituting a halftone phase shift mask in such a manner that the thickness of either of a transparent member or translucent member varies with the positions on a mask so that the phase difference between the transmitted light of transparent regions and the transmitted light of translucent regions vary with the positions on the mask surface. SOLUTION: The halftone phase shift mask 11 is formed of the transparent member or translucent member. The plural regions 14 with the phases as levels are formed in the respective positions on the mask 11. The thickness of either member of the transparent member or translucent member is varied with the positions on the mask 11 to vary the phase difference between the light transmitted through the transparent regions and the light transmitted through the translucent regions with the positions on the mask 11. Exposure is executed by using the mask 11 formed in such a manner and the focusing positions in the respective positions are determined. The exposure is executed by changing the defocusing quantity with the respective chips and the fefocusing positions where the sizes of the hole patterns in the arrangement positions of the respective patterns are maximized are determined as the focusing positions.