| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit capable of simplifying the manufacturing steps and having a fuse capable of making an aperture part as well as its manufacturing method. SOLUTION: In the manufacturing method, a storage node electrode (lower part electrode of capacitor) 13 of a capacitor such as a component in a storage cell of a DRAM and an insulating film 14 as a dielectric of the capacitor on the electrode 13 are formed and then a metallic film e.g. a titanium nitride film, etc., made of a high corrosion resistant metal is formed on a semiconductor substrate 1. Furthermore, making use of the photolithographic technology and the selective etching technology, a plate electrode (upper electrode of capacitor) 15a of the capacitor and a fuse 15b are formed by patterning the metallic films. Besides, an aperture part 22 is formed on a part of the fuse 15b. |
