发明名称 |
Metal oxide semiconductor device |
摘要 |
A p-type high concentration doped region is formed in a p-type semiconductor substrate between a n-type doped region as part of an input protection circuit and another n-type doped region as part of internal circuitry. A plate is divided into two over the high concentration doped region. The high concentration doped region suppresses generation of a parasitic MOS transistor with the plate for a gate, one of the n-type doped regions for a source, and the other for a drain.
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申请公布号 |
US5760441(A) |
申请公布日期 |
1998.06.02 |
申请号 |
US19960738419 |
申请日期 |
1996.10.25 |
申请人 |
NIPPON STEEL SEMICONDUCTOR CORPORATION |
发明人 |
IWANAMI, EIICHI |
分类号 |
H01L27/04;H01L21/822;H01L27/02;H01L27/06;H01L27/146;H01L31/0232;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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