| 发明名称 |
Composition for oxide CMP |
| 摘要 |
A chemical mechanical polishing composition comprising carboxylic acid, a salt and a soluble cerium compound at a pH above 3 and a method to selectively polish a silicon oxide overfill in preference to a silicon nitride film layer in a single step during the manufacture of integrated circuits and semiconductors.
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| 申请公布号 |
US5759917(A) |
申请公布日期 |
1998.06.02 |
| 申请号 |
US19960774488 |
申请日期 |
1996.12.30 |
| 申请人 |
CABOT CORPORATION |
发明人 |
GROVER, GAUTAM S.;MUELLER, BRIAN L. |
| 分类号 |
C09K3/14;C09G;C09G1/02;C23F1/00;H01L21/302;H01L21/304;H01L21/3105;(IPC1-7):C03C25/06 |
主分类号 |
C09K3/14 |
| 代理机构 |
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代理人 |
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