发明名称 Method and apparatus for testing semiconductor integrated circuits
摘要 A current detecting resistance is inserted somewhere in a path for feeding a power source current to a supply voltage terminal VDD of a DUT from a power source of a testing apparatus, and from the potential difference at both ends, a pulse form change due to the state transition of a CMOS circuit in the DUT contained in the power source current is detected. The number of pulse form changes is counted by a counter. In the DUT, a test pattern is applied from a driver, an expected value preset according to the test pattern and the count of the counter are compared, and it is judged whether or not the DUT is in good quality. The current due to a pulse form transition to be detected by the current detecting resistance is larger than the current flowing when the CMOS circuit in the DUT is in a static state, and therefore, the resistance value of the current detecting resistance may be set smaller, so that the time required for testing may be shortened.
申请公布号 US5760599(A) 申请公布日期 1998.06.02
申请号 US19960689263 申请日期 1996.08.06
申请人 SHARP KABUSHIKI KAISHA 发明人 EHIRO, MASAYUKI
分类号 G01R31/26;G01R31/28;G01R31/30;G01R31/3183;G01R31/319;H01L21/66;(IPC1-7):G01R31/26 主分类号 G01R31/26
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