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发明名称
MOSFET INTERFACE CIRCUIT HAVING AN INCREASED OR A REDUCED MUTUAL CONDUCTANCE
摘要
申请公布号
KR0142001(B1)
申请公布日期
1998.06.01
申请号
KR19950014102
申请日期
1995.05.31
申请人
NEC KK.
发明人
ISONO, TOSHIO
分类号
H03K5/01;H03K19/003;H03K19/0185;(IPC1-7):H01L27/08
主分类号
H03K5/01
代理机构
代理人
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