| 摘要 |
<p>A method for creating an electron beam pumped semiconductor laser screen (30) requires growing epitaxially an etch stop layer (10) on a gallium arsenide (GaAs) substrate (12). Next a gain region (14) is grown epitaxially on the etch stop layer (10). An output mirror (16) is then formed over the gain region (14). The output mirror (16) is bonded to a transparent support structure (20). Then the gallium arsenide substrate (12) is etched. The etch stop layer (10) is then etched. Finally, a back side mirror (24) is formed on the gain region (14), where the etch stop layer (16) was located.</p> |
