发明名称 METHODS FOR FORMING AN INTERMETALLIC REGION BETWEEN A SOLDER BUMP AND AN UNDER BUMP METALLURGY LAYER AND RELATED STRUCTURES
摘要 <p>Method for forming a solder bump (42) on a substrate (35) include the steps of forming an under bump metallurgy layer (36) on a substrate, forming a solder bump on the under bump metallurgy layer, and forming an intermetallic portion (33) of the under bump metallurgy layer adjacent the solder bump. In particular, the solder bump has a predetermined shape and this predetermined shape is retained while forming the intermetallic portion of the under bump metallurgy layer. This predetermined shape preferably has a flat surface opposite the substrate thus providing a uniform thickness of solder during the formation of the intermetallic portion. Related structures are also disclosed.</p>
申请公布号 WO9822979(A1) 申请公布日期 1998.05.28
申请号 WO1997US18157 申请日期 1997.09.30
申请人 MCNC;MIS, JOSEPH, DANIEL 发明人 MIS, JOSEPH, DANIEL
分类号 H01L21/60;H01L23/485;(IPC1-7):H01L21/48 主分类号 H01L21/60
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