发明名称 |
WRITE PROTECTED, NON-VOLATILE MEMORY DEVICE WITH USER PROGRAMMABLE SECTOR LOCK CAPABILITY |
摘要 |
A user-programmable write protection scheme provides flexibility and superior write protect features for an integrated circuit memory which comprises an array (11) of non-volatile erasable and programmable memory cells, including a plurality of sectors. Command logic (23) detects command sequences indicating operations for the array, including a program operation, a sector erase operation, a read operation, a sector lock operation, and a sector unlock operation. The sector protect logic (31) includes sector lock memory, including non-volatile memory cells that store sector lock signals for at least one sector in the array. Among other functions, the sector protect logic inhibits sector erase and program operations to a particular sector in response to a set sector lock signal corresponding to the particular sector, and to a first state of control signals in the set of control signals.
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申请公布号 |
WO9822950(A1) |
申请公布日期 |
1998.05.28 |
申请号 |
WO1996US18674 |
申请日期 |
1996.11.22 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD.;CHUANG, WEITONG;HUNG, CHUN-HSIUNG;CHANG, KUEN-LONG;LIU, YIN-SHANG;CHENG, YAO-WU |
发明人 |
CHUANG, WEITONG;HUNG, CHUN-HSIUNG;CHANG, KUEN-LONG;LIU, YIN-SHANG;CHENG, YAO-WU |
分类号 |
G11C8/20;G11C16/22;(IPC1-7):G11C11/34;G11C7/00 |
主分类号 |
G11C8/20 |
代理机构 |
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主权项 |
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地址 |
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