发明名称
摘要 <p>A dry etching apparatus is provided with parallel electrodes confronting each other, and a high frequency voltage is impressed between the electrodes. The electrode for holding a base material has a recess in its surface and the surface of the electrode is covered with an insulating layer so that part of the structure constituted by the insulating layer and electrode is not in contact with the base material.</p>
申请公布号 JP2758755(B2) 申请公布日期 1998.05.28
申请号 JP19910327180 申请日期 1991.12.11
申请人 发明人
分类号 H01L21/302;C23F1/02;H01J37/32;H01L21/00;H01L21/3065;H01L21/68;H01L21/683;(IPC1-7):H01L21/306 主分类号 H01L21/302
代理机构 代理人
主权项
地址