| 摘要 |
A semiconductor memory device, comprising: a memory cell array (MCA) having a plurality of memory cells arranged into a matrix pattern and having a plurality of pairs of bit lines (b11,b12;..bn/2 1,bn/2 2), a plurality of the memory cells arranged in a column direction being connected to each of the bit line pairs; a row decode circuit (RD) for decoding a row address inputted thereto to select the memory cells arranged in a row direction; a plurality of data lines (DLN), a plurality of the bit line pairs being connected in common to each of said data lines; a plurality of column gates (11-18,...1n-1,1n), each connected between a respective one of said data lines and each of the bit line pairs and turned on or off to connect or disconnect the respective one of said data lines to and from each of the bit line pairs; a plurality of column select lines (c1-cn/2), each connected to control terminals of mutually-adjacent k-units of said column gates, for turning on or off said k-unit column gates simultaneously; a column gate select circuit (CGS) for activating said column select lines; a data buffer (4) connected to said data lines for buffering and outputting data on said data lines; a register group (51,52) having a plurality of registers, each for storing one-bit data outputted by said data buffer (4); a transfer circuit (61,62) connected between said data buffer (4) and said register group (51,52), for scrambling said data outputted by said data buffer (4) and storing the scrambled data in the registers of said register group (51,52) in a predetermined sequence; a scanning circuit (9) for scanning the registers in the predetermined sequence to output data stored in the registers; and an output buffer circuit (8) for buffering and outputting data provided by said scanning circuit. <IMAGE>
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