| 摘要 |
<p>An integrated injection logic circuit having improved operating characteristics is provided, comprising an inverted, multiple-collector transistor having base regions characterized by a central active portion surrounded by a heavily-doped extrinsic base region to which the base contact is made. Using ion implantation, each active portion of the base region is provided with a dopant concentration which increases with distance from the collector junction, thereby increasing transistor speed and gain. The extrinsic portion of the base reduces series resistance for multicollector transistors, provides heavy doping at the surface for good ohmic base contacts; and most importantly, defines the active emitter-base regions. The effective or "active" collector-to-emitter area ratio of the device is improved by more than 50:1 compared with prior devices.</p> |
