发明名称 |
Method for reducing surface layer defects in semiconductor materials having a volatile species |
摘要 |
<p>The number of surface defects in semiconductor materials having a volatile species, particularly group-III nitride-based semiconductor devices, are reduced by first implanting species atoms (11) into the semiconductor sample (12) to fill some of the surface layer (18) species vacancies created by growth and device fabrication processes, and then rapid thermal annealing the sample (12) to repair broken bonds and crystalline defects and to move implanted species atoms (11) from interstitial to substitutional sites. An optional third step deposits a dummy layer (20) on the sample surface (16) prior to implantation, making possible an implantation profile that places a higher density of species atoms in the surface layer (18) than is attainable without the dummy layer (20) and to inhibit species atoms (11) from leaving the sample (12) during high-temperature processing steps that follow. <IMAGE></p> |
申请公布号 |
EP0844653(A2) |
申请公布日期 |
1998.05.27 |
申请号 |
EP19970120329 |
申请日期 |
1997.11.20 |
申请人 |
HUGHES ELECTRONICS CORPORATION |
发明人 |
NGUYEN, CHANH N.;WILSON, ROBERT G. |
分类号 |
H01L21/265;H01L21/322;(IPC1-7):H01L21/322 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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