发明名称 Power control device
摘要 <p>Providing a power control device of a simple structure which increases the reliability of a circuit as incorporated therein. A semiconductor component (31) constituting a power control device comprises a semiconductor chip (41), atop of which a cathode (45) and a gate (46) are formed via an oxide film portion (42). The cathode (45) comprises a pad portion (43), a fusion portion (47) and a contact portion (48). The pad portion (43) and the contact portion (48) are interconnected by the fusion portion (43) only. An anode (50) is formed at the bottom of the semiconductor chip (41). With the flow of a fusing current through the fusion portion (47), the fusion portion (47) is fused by heat generated therefrom whereby the current flow through the cathode (45) and the anode (50) is interrupted. <IMAGE></p>
申请公布号 EP0819998(A3) 申请公布日期 1998.05.27
申请号 EP19970112385 申请日期 1997.07.18
申请人 SHARP KABUSHIKI KAISHA 发明人 UEUCHI, GEN;IMANAKA, HIDEYUKI;TSUNANO, HIROFUMI
分类号 H01L29/74;G05F1/66;H01L21/82;(IPC1-7):G05F1/66 主分类号 H01L29/74
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