STABILIZATION OF THE INTERFACE BETWEEN TIN AND A1 ALLOYS

摘要

A method of manufacturing an integrated circuit which includes an interface between a metal layer and a barrier layer of a nitride of a refractory metal, co mprising the steps of depositing the barrier layer onto a wafer at high temperature; subjecti ng the barrier layer to a mixture of oxygen or an oxygen-containing gas and an inert ga s in the presence of a plasma at low pressure and for a time sufficient to oxidize the su rface of the barrier layer; removing the oxygen-containing gas; and depositing the metal laye r onto the oxidized surface without subjecting said wafer to an air break. The method permi ts high throughput to be achieved at low cost.