发明名称 |
Adjustable write voltage circuit for SRAMS |
摘要 |
A semiconductor integrated circuit includes a biasing circuit connected to a plurality of memory cells via an access line. Each of the memory cells includes at least one switching device. The biasing circuit supplies a potential, having a value between a reference voltage and the threshold voltage of the switching device, to the access line for programming one of the memory cells to a logic low level.
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申请公布号 |
US5757713(A) |
申请公布日期 |
1998.05.26 |
申请号 |
US19960715502 |
申请日期 |
1996.09.18 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
GANS, DEAN;WILFORD, JOHN R. |
分类号 |
G11C11/419;(IPC1-7):G11C5/14 |
主分类号 |
G11C11/419 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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