发明名称 Process for making semiconductor wafer
摘要 The present invention provides a process for making a semiconductor wafer, including slicing an ingot to obtain wafers; surface-grinding both sides of each of the wafers; etching the wafers with an alkaline solution; chamfering the peripheral portion of each of the wafers; both-side polishing the wafers for mirror processing ; cleaning both sides of each of the wafers to remove the particles attached to the sides; and drying and cleaning the wafers. By employing the present process, the time for polishing the wafer can be shortened, and the semiconductor wafer can be made effectively.
申请公布号 US5756399(A) 申请公布日期 1998.05.26
申请号 US19970826226 申请日期 1997.03.27
申请人 KOMATSU ELECTRONIC METALS CO. LTD. 发明人 HAJIME, HIROFUMI;YUBITANI, TOSHIHARU
分类号 B24B9/06;B28D5/00;H01L21/00;H01L21/304;H01L21/306;(IPC1-7):H01L41/22 主分类号 B24B9/06
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