发明名称 |
Process for making semiconductor wafer |
摘要 |
The present invention provides a process for making a semiconductor wafer, including slicing an ingot to obtain wafers; surface-grinding both sides of each of the wafers; etching the wafers with an alkaline solution; chamfering the peripheral portion of each of the wafers; both-side polishing the wafers for mirror processing ; cleaning both sides of each of the wafers to remove the particles attached to the sides; and drying and cleaning the wafers. By employing the present process, the time for polishing the wafer can be shortened, and the semiconductor wafer can be made effectively.
|
申请公布号 |
US5756399(A) |
申请公布日期 |
1998.05.26 |
申请号 |
US19970826226 |
申请日期 |
1997.03.27 |
申请人 |
KOMATSU ELECTRONIC METALS CO. LTD. |
发明人 |
HAJIME, HIROFUMI;YUBITANI, TOSHIHARU |
分类号 |
B24B9/06;B28D5/00;H01L21/00;H01L21/304;H01L21/306;(IPC1-7):H01L41/22 |
主分类号 |
B24B9/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|