| 摘要 |
There is provided a semiconductor device sealed therearound with resin, including (a) a lead frame formed with an island region and a plurality of inner leads, tip ends of the inner leads defining a cavity as viewed perpendicularly to a plane of the chip, the island region being located in the cavity, (b) a chip mounted on the island region of the lead frame and having a plurality of electrodes thereon, and (c) wires for connecting the electrodes of the chip to the inner leads. The cavity is defined so that a wire for connecting inner leads to electrodes located at corners on a diagonal line D1 of the chip is shortest in length and a wire for connecting one of electrodes located at a corner on a diagonal line D2 perpendicular to the diagonal line D1 is longest in length. The present invention makes it possible to shorten a wire which would receive greatest impact from molten resin in the step of introducing molten resin into a space defined by upper and lower molds and enclosing the semiconductor device therein. Hence, it is possible to prevent shortcircuits between adjacent wires in the above mentioned step, thereby providing a resin-sealed type semiconductor device with high yield and high reliability.
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