发明名称 Method for removing a diffusion barrier layer on pad regions
摘要 A method for removing a diffusion barrier layer on pad regions and diminishing the effect of plasma ions induced when removing a photoresist layer by a plasma asher. A two stage rapid thermal processing step is applied to the partially-removed diffusion barrier layer before a metal layer is formed. The first stage lasts a longer period of time at a lower temperature, for example, in the range of between 50 and 60 seconds at a temperature of about 600 DEG C. The second stage lasts a shorter period of time at a higher temperature, for example, in the range of between 20 and 30 seconds at a temperature of about 750 DEG C.
申请公布号 US5756376(A) 申请公布日期 1998.05.26
申请号 US19960652895 申请日期 1996.05.23
申请人 UNITED MICROELECTRONICS CORPORATION 发明人 SHENG, YI-CHUNG;CHUNG, CHEN-HUI;SU, KUAN-CHENG
分类号 H01L21/768;H01L23/485;(IPC1-7):H05K1/00;H05K1/03 主分类号 H01L21/768
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