发明名称 |
Method for removing a diffusion barrier layer on pad regions |
摘要 |
A method for removing a diffusion barrier layer on pad regions and diminishing the effect of plasma ions induced when removing a photoresist layer by a plasma asher. A two stage rapid thermal processing step is applied to the partially-removed diffusion barrier layer before a metal layer is formed. The first stage lasts a longer period of time at a lower temperature, for example, in the range of between 50 and 60 seconds at a temperature of about 600 DEG C. The second stage lasts a shorter period of time at a higher temperature, for example, in the range of between 20 and 30 seconds at a temperature of about 750 DEG C.
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申请公布号 |
US5756376(A) |
申请公布日期 |
1998.05.26 |
申请号 |
US19960652895 |
申请日期 |
1996.05.23 |
申请人 |
UNITED MICROELECTRONICS CORPORATION |
发明人 |
SHENG, YI-CHUNG;CHUNG, CHEN-HUI;SU, KUAN-CHENG |
分类号 |
H01L21/768;H01L23/485;(IPC1-7):H05K1/00;H05K1/03 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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