| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique to obtain an EL element having good characteristics and long life. SOLUTION: At the time of providing the inside of a vacuum chamber with a coil 7 internally arranged with a target 9 consisting of a cathode electrode film material and forming a cathode electrode film 14 thereof on the surface of an org. thin film 13 on a substrate 3 by the sputtering method, the distance (d) between the top end of this coil 7 and the substrate 3 is set at >=200mm and the frequency of the AC voltage to be impressed on the coil 7 is set at a range of 13.56 to 100MHz. Since electrons and ions are no longer made incident on the substrate, the damage to the org. thin film 13 may be lessened. At the initial period of the formation of the cathode electrode film 14, the pressure in the vacuum chamber is set at a pressure below 1.33×10<-2> Pa to lessen the damage to the boundary between the cathode electrode film 14 and the org. thin film 13. The film forming speed is improved if the amt. of the sputtering gas to be introduced is increased when the cathode electrode film 14 is formed to 20 to 50Å.
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