FORMATION OF OXIDE SUPERCONDUCTOR THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a metallic-oxide superconductor thin film using MOCVD method. SOLUTION: At least one kind of organometallic compd. of alkaline-earth metal consisting of Ba and Sr and/or its gaseous halide, at least one kind of organometallic compd. of group IIIa element and/or its gaseous halide and an organometallic compd. of transition metal contg. at least Cu and or its gaseous halide are mixed along with an inert gas. A gas contg. oxygen is mixed with the gaseous mixture to attain a specified oxygen partial pressure, and the gaseous mixture is decomposed on a substrate to form the thin film of such a multiple oxide as LnBa2 Cu3 O7 and Ln1-x Srx CuO4-y (Ln is group IIIa elements) on the substrate.