Power thyristor with MOS gated turn-off and MOS-assised turn-on

摘要

The power thyristor of this invention has a cellular emitter structure. Each cell also has a FET assisted turn-on gate integrated into the cell. A turn-on gate voltage of one polarity is applied to a FET gate element that overlies the surface of the cell and to the turn-on gate integrated into the cell. When this voltage is so applied, a channel underlying the FET gate element becomes conductive, which allows the integrated turn-on gate to provide drive to the upper base-upper emitter junction of the thyristor cell thereby turning the thyristor cell on./!