Integrated silicon pin diode electro-optic waveguide

摘要

PCT No. PCT/GB93/01983 Sec. 371 Date Mar. 20, 1996 Sec. 102(e) Date Mar. 20, 1996 PCT Filed Sep. 21, 1993 PCT Pub. No. WO95/08787 PCT Pub. Date Mar. 30, 1995The device comprises a layer of silicon separated from a substrate by a layer of insulating material. A rib having an upper surface and two side surfaces is formed in the layer of silicon to provide a waveguide for the transmission of optical signals. A lateral doped junction is formed between the side surfaces of the rib such that an electrical signal can be applied across the junction to control the density of charge carriers across a substantial part of the cross-sectional area of the rib thereby actively altering the effective refractive index of the waveguide./!