发明名称 Exposure method and pattern data preparation system therefor, pattern data preparation method and mask as well as exposure apparatus
摘要 Selective pattern exposure with high reliability is made possible by a desired pattern of repeated pattern and a non-repeated pattern. Exposure technology is obtained to enable improvement of preparation efficiency of pattern data and to secure inspection of an aperture pattern. With the invention, an electron beam is used as focused beam, and a pattern exposure apparatus of a batch transfer system for transferring repeated pattern and non-repeated pattern of plural graphics of a semiconductor integrated circuit or the like comprises an EB drawing section for controlling the beam and irradiating beam onto a sample, a control I/O section, a drawing control section and a data storage section. In the EB drawing section, a semiconductor wafer is mounted on a platform, and in the path of the electron beam from the electron beam source to the stage, a first mask, a blanking electrode, an electron lens, a first deflector, a second deflector, a second mask and a third deflector are installed.
申请公布号 US5757409(A) 申请公布日期 1998.05.26
申请号 US19960644089 申请日期 1996.05.10
申请人 HITACHI, LTD. 发明人 OKAMOTO, YOSHIHIKO;YODA, HARUO;TAKADA, IKUO;SHIBATA, YUKINOBU;HIRAKAWA, AKIRA;SAITOU, NORIO;OKAZAKI, SHINJI;MURAI, FUMIO
分类号 G03F7/20;H01J37/305;H01J37/317;H01L21/027;(IPC1-7):B41J2/435 主分类号 G03F7/20
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