| 摘要 |
PURPOSE:To reduce the output fluctuation of a semiconductor laser exciting solid laser, by forming dielectric multilayered films, in the manner in which the reflection factor to a exciting light of the surface which the pumping light for a solid laser crystal enters. is small, and the other surface has a hight reflection factor to the exciting light. CONSTITUTION:A solid laser crystal 2 is constituted in a parallel flat plates type. The reflection factor of a first dielectric multilayered film 3, which is formed on the surface of the solid laser 2 on a semiconductor laser 1 side, to the wavelength of the semiconductor laser 1 is R1. The reflection factor of a second dielectric multilayered film 4 on the opposite side is R2. The interval between the semiconductor laser 1 and the solid laser crystal 2 is (d). The thickness and the refractive index of the solid laser crystal 2 are (t) and (n), respectively. The absorption coefficient of the crystal 2 to the wavelength of the semiconductor laser 1 is alpha. Then the formula is to be satisfied. Thereby the wavelength fluctuation width of the semiconductor laser 1 for exciting the solid laser can be reduced, so that the output fluctuation of the solid laser can be reduced. |
