PRODUCTION OF BARIUM TITANATE SEMICONDUCTOR PORCELAIN

摘要

PROBLEM TO BE SOLVED: To provide a method for producing barium titanate semiconductor porcelain by which porcelain grains can finely be divided to <=1μm so that they contribute toward increasing dielectric strength and reducing the voltage dependency of specific resistance-temp. characteristics. SOLUTION: A mixture of fine barium titanate powder having a cubic crystal structure and >=4.020Å lattice constant with a very small amt. of a semiconductor forming agent is used as powdery starting material for obtaining barium titanate semiconductor porcelain by firing. The ratio of Ba to Ti in the barium titanate powder is preferably regulated to 0.990-1.000 so as to reduce specific resistance at room temp.